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Brand Name : STMicroelectronics
Model Number : STP55NF06FP
Certification : CE, GCF, ROHS
Place of Origin : China
MOQ : 1
Price : Negotiable
Payment Terms : T/T, Western Union,
Supply Ability : 1000pcs per month
Delivery Time : 3-5 working days after received the payment
Packaging Details : Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Function : Step-Up, Step-Down
Output Configuration : Positive or Negative
Topology : Buck, Boost
Output Type : Adjustable
Number of Outputs : 1
STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control
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Features
1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02andOmega; (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation.
2:High Current Handling: Capable of handling up to 55A continuous drain current, with even higher pulse current capability, making it suitable for high-power applications.
3:Logic-Level Gate Drive: Low threshold voltage (Vgs(th) typically 2V to 4V), allowing it to be directly driven by 5V or 3.3V microcontrollers (e.g., Arduino, STM32) without requiring level-shifting circuits.
4:Fast Switching Speed: Optimized for high-frequency switching applications, such as SMPS and PWM motor control, reducing switching losses.
5:Fully Insulated Package (TO-220FP FullPak): The TO-220FP encapsulation fully encloses the metal heatsink, providing enhanced insulationandnbsp;and safety while simplifying assembly by eliminating the need for additional insulation pads.
6:High Voltage Rating: Drain-source voltage (Vds) rating of 60V, offering sufficient margin for 12V, 24V, and higher voltage systems.
7:Rugged Design: Avalanche rated, ensuring durability under energy surges from inductive load switching (e.g., motors, relays).
8:Low Gate Charge (Qg): Low total gate charge reduces driving requirements and enables efficient high-speed switching.
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Applications
■ Switching application
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Description
These Power MOSFETs have been developed using STMicroelectronicsandrsquo; unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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INFORMATION
| Category | andnbsp; | |
| Mfr | andnbsp; | |
| Series | andnbsp; | |
| Packaging | Tube | andnbsp; |
| Part Status | Active | andnbsp; |
| FET Type | andnbsp; | |
| Technology | andnbsp; | |
| Drain to Source Voltage (Vdss) | 60 V | andnbsp; |
| Current - Continuous Drain (Id) @ 25anddeg;C | andnbsp; | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | andnbsp; |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 27.5A, 10V | andnbsp; |
| Vgs(th) (Max) @ Id | 4V @ 250andmicro;A | andnbsp; |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | andnbsp; |
| Vgs (Max) | andplusmn;20V | andnbsp; |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V | andnbsp; |
| FET Feature | - | andnbsp; |
| Power Dissipation (Max) | 30W (Tc) | andnbsp; |
| Operating Temperature | -55anddeg;C ~ 175anddeg;C (TJ) | andnbsp; |
| Grade | - | andnbsp; |
| Qualification | - | andnbsp; |
| Mounting Type | Through Hole | andnbsp; |
| Supplier Device Package | TO-220FP | andnbsp; |
| Package / Case | andnbsp; | |
| Base Product Number |
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Drawing

Our advantage :phones, PDAand#39;s, notebook comput.ers
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STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Images |